ad va nced n - ch pow e r m o sfet absolute maximum ratings ( t c =25 c un less otherwise noted) characteristic symbol rating unit dr ai n-sourc e v o l t age v ds s 600 v gate-source voltage v gs s 20 v (t c=25 ) 1.5 a drain current (dc) * i d (t c=100 ) 1 a dr ai n current (p ul sed) * i dm 6.0 a p o wer dissipation p d 19.1 w a v alanche current (single) i as 2.0 a sin g le pu lse d av al anche energy e as 88 mj a v alan ch e cu rren t (r epet it ive) i ar 2.0 a r e petitive av alanche energy e ar 8 mj junc ti on te mper ature t j 150 stor age temper ature r a nge t stg -55~150 c * li m i t e d by m a xim u m junc t i on t e m p erat ur e characteristic symbol t yp. max. unit junc ti on-ca s e r th(j-c ) - 5.6 thermal resistance junc ti on- a mbi e nt r th (j- a) - 100 c/ w FIR2N60FG advanced n-ch power mosfet ? high v o ltage: bv ds s =600v( m in.) ? low c rss : c rss =3.4 f(t y p . ) ? low gate ch arge : qg= 7.0nc(t y p . ) ? low r ds( on) :r ds(on) =7.0 (m ax .) features switchng regulator application g d s s g d marking diagram pin connection to-220f a = assembly location y = y ear ww = w ork w eek = specific device code fir2n60f yaww fir2n60f page 1/7 @ 2010 copyright by american first semiconductor http://
electrical characteristics (t c =25 c unless otherwise noted) characteristic symbol t e st condition min. t y p. max. unit dr ai n-source breakdown v ol t age bv ds s i d =250ua, v gs =0 600 - - v gate threshol d vol t age v gs ( t h ) i d =250ua, v ds =v gs 2.0 3.0 4.0 dr ai n-source cut - off current i ds s v ds =600v , v gs =0v - - 25 ua gate l e akage current i gs s v ds =0v , v gs = 30v - - 10 0 na dr ai n-source on-resi s tance r ds(on) v gs =10v , i d =1. 0a - 7. 0 8. 0 f o rw ard tr an sfer conducta nce g fs v ds =10v , i d =1.0a - 5 - s input capaci t a nce ci ss - 170 - output capac i tance coss - 27 - r e verse t r an sfer capaci ta nce crss v gs =0v , v ds =25v , f=1mhz - 5 - pf tu r n - o n d e l a y t i m e t d(o n ) - 8 - ri se ti me t r - 30 - t u rn-off dela y time t d(o ff) - 22 - fa l l t i m e t f v dd =300v , i d =1.5a r g =4.7 ? - 55 - ns t o tal gate charge q g - 7. 5 - gate-source charge q gs - 1. 7 - gate-d r a i n charge q gd v ds =480v , v gs =10v i d =1.5a - 4. 0 - nc sour ce-drain diode ratings and characteristics (t c =25 c unless otherwise noted) characteristic symbol t e st condition min. t yp. max. unit source curr ent (dc) i s - - 1.5 source curr ent (pulsed) i sm integr al reverse di ode in t h e m o sf e t - - 6.0 a for w a r d v o l t a g e v sd v gs =0v , i s =1.5a - - 1.5 v r e verse reco very time t rr - 250 - ns r e verse reco very charge q rr i s =1.5a, v gs =0v di f / d t=10 0a /us - 55 0 - nc no te ; rep e titiv e ratin g : pu lse wid t h limited b y max i m u m j u n c tio n tem p eratu r e l=10.0m h , i as =1.5a, v. dd =50v , r g =25 ? , s t art i ng t j =25 pu lse t est : pulse wid t h 300us, duty cycle 2% essen tially in dep e nd en t of operatin g tem p eratu r e FIR2N60FG page 2/7 www.first-semi.com
- = fig. 5 capacitance - v ds fi g. 1 i d - v ds fig. 4 i s - v sd fi g. 3 r ds ( on ) - i d fi g. 6 v gs - q g electrical characteristic curves fi g. 2 i d - v gs FIR2N60FG p a ge 3/7 www.first-semi.com
? ` c * c fig. 8 r ds(on) - t j f i g . 9 i d - t c fig. 7 v dss - t j fi g. 1 0 s a fe oper ati n g ar ea electrical characteristic curves FIR2N60FG p a ge 4/7 www.first-semi.com
fi g. 1 1 ga te ch ar ge t e s t ci r c ui t & w a vef o rm fi g. 12 resi stive switching t e s t cir c uit & w ave form f i g . 1 3 e as t e st cir c uit & w ave for m FIR2N60FG p a ge 5/7 www.first-semi.com
fig. 14 diode rever se recovery t i me t e s t cir c uit & w ave form FIR2N60FG p a ge 6/7 www.first-semi.com
FIR2N60FG page 7/7 www.first-semi.com dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.1 16 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.1 18 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.1 17 2.51 2.96 s 0.092 0.1 13 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 12 3 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. package dimensions to - 2 2 0f
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